Self-aligned metal oxide tft with reduced number of masks and with reduced power consumption

ABSTRACT

A method of fabricating MOTFTs includes positioning opaque gate metal on a transparent substrate, depositing gate dielectric material overlying the gate metal and a surrounding area, and depositing metal oxide semiconductor material thereon. Etch stop material is deposited on the semiconductor material. Photoresist defines an isolation area in the semiconductor material. Exposing the photoresist from the rear surface of the substrate and removing exposed portions to leave the etch stop material uncovered except for a portion overlying and aligned with the gate metal. Etching uncovered portions of the semiconductor material to isolate the TFT. Using the photoresist, selectively etching the etch stop layer to leave a portion overlying and aligned with the gate metal and defining a channel area in the semiconductor material. Depositing and patterning conductive material to form source and drain areas.

FIELD OF THE INVENTION

This invention generally relates to a self-alignment fabrication ofmetal oxide TFTs to remove critical alignment tools and a reduction inmasks during manufacturing. The resulting MOTFT array enables higherpixel density and lower power consumption.

BACKGROUND OF THE INVENTION

Metal oxide thin film transistors (MOTFT) are gaining interest as highperformance TFT backplanes for large area applications such as activematrix organic light emitting diodes (AMOLED). MOTFTs have gainedpopularity because of their high mobility in amorphous and/ornano-crystalline states and low fabrication temperature. The highmobility enables applications that require high performance such asintegrated drivers, driving OLED displays. See for example the U.S. Pat.No. 7,977,868 entitled “Active Matrix Light Emitting Display”, andincorporated herein by reference. The amorphous and/or nano-crystallinenature enables short range uniformity which plagues poly-Si TFTs. Thelow fabrication temperature makes the MOTFTs attractive for large areaflat panel displays (FPD) because they can be fabricated on low costsubstrates and even achieve flexible FPDs.

Some remaining challenges are to reduce the parasitic gate-to-source andgate-to-drain capacitances. These capacitances become important withdisplay frame rate, when the number of pixels in a row increase alongwith information content. Overlap between the gate and the source/drainregions leads to the parasitic gate-to-source and gate-to-draincapacitances. The overlap is necessary to insure that the channel isfully controlled by the gate. But an excessive overlap leads to thelarge parasitic capacitances. The degree of overlapping is determined bythe alignment capability between the patterning of the gate layer, thechannel layer, and the source/drain metal layer. There will be somedegree of misalignment due to tool capability, which can also beeliminated by the present method. The other major misalignment, and thatwhich is also addressed here, is due to substrate deformation (i.e.deformation of substrates in processing such as in glass substrates dueto high temperature treatment or in plastic substrates due to anincrease in moisture, chemical and heat treatment). Basically, theoverlap is designed so that under the worst circumstance there will beoverlap between the gate and the source/drain metal. For low cost FPDsthe area of the substrates is large and the size of exposure field isalso large. The misalignment is going to be relatively large over largesubstrates and thus large exposure fields. Large overlap designs areneeded to compensate for all potential misalignments, thereby leading tolarge parasitic overlap capacitances.

Typically, misalignment due to deformation increases with the size ofthe exposure field. One way to compensate for the deformation is toreduce the exposure field by performing multiple exposures on thesubstrate and then stitching the multiple patterns together. However,this approach substantially increases the manufacturing cost due tolower through put and the high cost of stitching. Many of the large areaapplications use either glass or plastic substrates. To produce TFTs onlarge areas at low cost, it is advantageous to use low cost lithographictools such as proximity/projection aligners/scanners rather than themore expensive stepper tools.

The large parasitic capacitances lead to slower waveforms (and thuslimited number of pixels for a given frame time) and more powerconsumption. It is important therefore to reduce the parasiticcapacitances while maintaining the minimum overlap between the gate andthe source/drain to ensure that the channel is fully controlled by thegate. Also, these conditions have to be met over the large substrateareas regardless of substrate deformations and tool alignmentcapabilities.

Another item to be addressed herein is the cost of manufacturing theTFTs. Primarily, the cost of manufacturing TFTs depends on the number ofmasks used during the manufacturing process. Lithography is a big partof the fabrication cost. Therefore, a reduction in the number of masks(e.g. from four masks to three masks), while still achieving theself-alignment between the gate and the source/drain, or between thegate and the etch-stop, or between the S/D electrodes and the pixelelectrode pad, can result in a major reduction in the overall cost.

It would be highly advantageous to have a self-aligned process in whichthere are no or fewer critical alignment steps.

Accordingly, it is an object of the present invention to provide new andimproved methods of fabricating self-aligned metal oxide TFTs and thinfilm backpanel circuit.

It is another object of the present invention to provide new andimproved methods of fabricating metal oxide TFTs and thin film backpanelcircuit including no critical alignment tools or steps and using aminimum of process steps.

It is another object of the present invention to provide new andimproved methods of fabricating self-aligned metal oxide TFTs and thinfilm backpanel circuit using a reduced number of masks.

It is another object of the present invention to provide new andimproved methods of fabricating self-aligned metal oxide TFTs and thinfilm backpanel circuit with reduced inter-electrode capacitance.

It is another object of the present invention to provide a new andimproved metal oxide TFT and thin film backpanel circuit with reducedinter-electrode capacitance.

It is another object of the present invention to provide a new andimproved metal oxide TFT and thin film backpanel circuit with reducedalignment error and thus smaller channel length.

It is another object of the present invention to provide a new andimproved method of making display backpanels with self-aligned metaloxide TFT with reduced inter-electrode capacitance.

It is another object of the present invention to provide a method ofmaking high uniformity over large display area with phototools with lowalignment accuracy.

SUMMARY OF THE INVENTION

Briefly, to achieve the desired objects of the instant invention inaccordance with a preferred embodiment thereof, provided is a method offabricating metal oxide TFTs on transparent substrates including thesteps of providing a transparent substrate having a front surface and arear surface, positioning opaque gate metal on the front surface of thesubstrate defining a gate area for a TFT, depositing a layer oftransparent gate dielectric material on the front surface of thesubstrate overlying the gate metal and a surrounding area and a layer oftransparent metal oxide semiconductor material on the surface of thelayer of transparent gate dielectric.

The method further includes depositing a layer of etch stop material onthe layer of metal oxide semiconductor material and positioningphotoresist material on the layer of etch stop material. The etch stopmaterial and the photoresist material are selectively removable and thephotoresist material is one of patterned and selectively removed todefine an isolation area in the layer of transparent metal oxidesemiconductor material.

The method then includes removing uncovered portions of the layer ofetch stop material, remaining portions of the layer of etch stopmaterial forming a metal oxide semiconductor material etch mask and astep of exposing the photoresist material from the rear surface of thesubstrate using the opaque gate metal on the front surface of thesubstrate as a mask and removing exposed portions of the photoresistmaterial so as to leave the layer of etch stop material uncovered exceptfor a portion overlying and aligned with the gate metal.

Using the metal oxide semiconductor material etch mask, etchinguncovered portions of the metal oxide semiconductor material so as toisolate the TFT and using the portion of the photoresist materialdirectly overlying and aligned with the gate metal, selectively etchinguncovered portions of the etch stop layer leaving a portion of the etchstop layer overlying and aligned with the gate metal. The portion of theetch stop layer defines a channel area in the layer of metal oxidesemiconductor material and serves as a passivation layer for the metaloxide. The final step of the method is depositing and patterningconductive material on the portion of the etch stop layer overlying andaligned with the gate metal and on the layer of metal oxidesemiconductor material to form source and drain areas on opposed sidesof the channel area.

The metal oxide TFT has reduced inter-electrode capacitance generallybecause of the alignment of the etch stop layer with the gate metalsubstantially without regard to deformation of the substrate. Further,the metal oxide TFT has reduced inter-electrode capacitance generallybecause the etch stop layer is substantially thicker than the gatedielectric layer and the dielectric constant is substantially lower.

The desired objects of the instant invention are further realized inaccordance with a preferred embodiment thereof, which provides a metaloxide TFT with reduced inter-electrode capacitance. The TFT includes atransparent substrate having a front surface and a rear surface, anopaque gate metal positioned on the front surface of the substrate anddefining a gate area for a TFT, a layer of transparent gate dielectricmaterial positioned on the front surface of the substrate overlying thegate metal and a surrounding area, and a layer of transparent metaloxide semiconductor material positioned on the surface of the layer oftransparent gate dielectric. A layer of etch stop material is positionedon the layer of metal oxide semiconductor material overlying and alignedwith the gate metal. The layer of the etch stop material defines achannel area in the layer of metal oxide semiconductor material.Conductive material is patterned on the portion of the etch stop layeroverlying and aligned with the gate metal and on the layer of metaloxide semiconductor material to form source and drain areas on opposedsides of the channel area.

In a preferred embodiment the layer of etch stop material has athickness greater than the thickness of the layer of transparent gatedielectric material and a lower dielectric constant than a dielectricconstant of the transparent gate dielectric material to substantiallyreduce inter-electrode capacitance.

BRIEF DESCRIPTION OF THE DRAWINGS

The foregoing and further and more specific objects and advantages ofthe instant invention will become readily apparent to those skilled inthe art from the following detailed description of a preferredembodiment thereof taken in conjunction with the drawings, in which:

FIG. 1 illustrates a first stage or phase in the fabrication of TFTs inaccordance with the present invention; and

FIG. 2 illustrates an enlarged final stage or phase in the fabricationof TFTs in accordance with the present invention;

FIGS. 3 through 9 illustrate several stages or phases in anotherfabrication process of TFTs in accordance with the present invention;and

FIGS. 10 through 12 each illustrate a different pixel layer-out withself-aligned MOTFT in sequential steps designated (a) through (e) and(a) through (g) respectively, in accordance with the present invention.

DETAILED DESCRIPTION OF A PREFERRED EMBODIMENT

Turning now to the drawings, attention is first directed to FIG. 2, forthe purpose of briefly explaining prior art problems. The deviceillustrated in FIG. 2 is a bottom gate and top source/drain metal oxideTFT, designated 10. TFT 10 includes a substrate 12 with gate metal 14patterned thereon. A gate dielectric layer 16 is deposited over gatemetal 14 and a semiconductor active layer 18 is deposited overdielectric layer 16 so as to insulate active layer 18 from gate metal14. An etch stop/passivation area 20 is patterned on active layer 18 andsource/drain areas 22 are formed on opposite sides of etchstop/passivation area 20 on the upper surface of active layer 18. Thespace between the source and drain, i.e. etch stop/passivation area 20,defines the conduction channel, designated 24, for TFT 10. It will beunderstood by the artisan that the terms “etch stop” and “passivation”are used throughout this disclosure to describe the primary purpose ofspecific layers but that they are generally interchangeable and thetitle provide is not intended to limit the purpose or use of the layer.For example, area 20 has the dual function of an etch stop layer and apassivation layer.

In the prior art process of fabricating TFT 10, two critical alignmentsteps are prevalent. The first critical alignment step is betweenpassivation area 20 (channel protection layer) and gate metal 14. Gatemetal 14 should be slightly larger than passivation area 20, indicatedas overlap area d1 where d1>0. The second critical alignment is betweenthe pattern for source/drain 22 and passivation area 20. There should bea slight overlap between source/drain areas 22 and passivation area 20,indicated as overlap area d2 where d2>0, so that the etching of thesource/drain conductor in the formation of source/drain areas 22 (i.e.the channel space between source/drain 22) will not affect active layer18. That is the possibility that an etchant can pass around the edges ofpassivation area 20 and reach active layer 18 is prevented by overlapd2. It will be understood that any alignment patterning includes sometolerance and that the fabrication process includes some deformationtolerance.

Therefore to make a channel length of L (generally the horizontal widthof passivation area 20), the distance between the source and drainshould be smaller than (L−2×d2). In this relationship or description ofL, d2 includes any alignment and deformation tolerance. Further,horizontal width of gate metal 14 should be larger than (L+2×d1). Inthis relationship or description of L, d1 includes any alignment anddeformation tolerance. Thus, the value of overlaps d1 and d2 depends onthe alignment tool (i.e. the alignment tolerance) and the amount ofsubstrate deformation during the fabrication process. For low costtools, overlaps d1 and d2 are relative large, around 5 microns withoutthe added contribution from substrate deformation. For 10 ppm substratedeformation, a field size of 50 cm can contribute another 5 microns tothe tolerance. It is desirable at present to fabricate TFTs with channellengths as small, or smaller, than 10 microns. However, using the priorart fabrication methods described above with low cost tools and largefield sizes, forming a channel length of 10 microns is not possible, oralternatively a source/drain spacing of 10 microns, will result in Lequaling 30 microns because of the alignment/deformation tolerancesincluded in overlaps d1 and d2.

To understand the self-alignment procedure of the present invention,FIGS. 1 and 2 illustrate sequential steps in an embodiment fabricated inaccordance with the present invention. Turning specifically to FIG. 1, atransparent substrate 12 is illustrated, which may be any convenientmaterial transparent to radiation (i.e. self-alignment exposure)wavelength used in the self-alignment procedure, such as glass, plastic,etc. Throughout this disclosure the terms “transparent” and “opaque”mean that the material being discussed or described is transparent oropaque to radiation (i.e. exposure) wavelengths used in theself-alignment procedure. Gate metal layer 14 is patterned on the uppersurface of substrate 12 by any convenient means. Since the position ofgate metal layer 14 is not critical virtually any non-criticalpatterning technique can be used.

It will be understood by those of skill in the art that in addition toor instead of forming gate metal layer 14 with a proximity or aprojection photolithography tool, the gate layer can be formed with anyof the various printing processes known to experts in the field,including ink jetting, imprinting or off-set printing methods, layer 14can also be patterned with laser writing lithography. Also, gate metal14 is an opaque conductive metal that will not transmit the radiationwavelengths used in the self-alignment procedure. While a single gatemetal 14 is illustrated for convenience in understanding, it will beunderstood that this might represent one or more (even all) of the TFTsused in a backplane or other large area applications.

A thin layer 16 of gate dielectric material is formed over gate metal 14and the surrounding area. For purposes of this disclosure the term“surrounding area” refers to the gate dielectric covering the patternedgate metal completely so that no leakage in TFT channel area occurs.Again, layer 16 may be a blanket layer covering the entire large areaapplication and no alignment is required. The gate dielectric materialmay be any convenient material that provides the desired dielectricconstant for TFT operation and is transparent to the radiationwavelengths used in the self-alignment procedure. Examples include SiN,SiO2, SiON, Al2O3, ZrO2, Ta2O5, TiO2 in single layer or in multiplestack form.

The self-aligned TFT and backpanel process disclosed in this inventionenables the fabrication of TFTs with low inter-electrode capacitanceeven for a gate dielectric with high dielectric constant. It should alsobe pointed out specifically that, other than methods known in the a-SiTFT industry (such as PECVD, sputter, atomic layer deposition, ALD), themetal-oxide type gate dielectrics listed above can also be made with asurface chemical reaction process on top of a mating metal includingoxidation under high temperature, plasma oxidation, anodization andtheir combinations. It should also be specifically understood that withsuch surface reaction methods, one could achieve higher gate dielectricconstant and lower leakage current than SiO2, SiON and SiN achieved byPECVD for a given process temperature. For example, 100 nm thinamorphous Al2O3 film processed by 80V anodization under 5-20° C.environmental temperature, Al2O3 film with dielectric constant beyond 8(areal capacitance >70 nF/cm²), and leakage current below 1 nA/cm² under1 MV/cm electric field bias has been achieved. The RC constant is thusmore than 700 Sec. Such high K dielectric film is ideal for highmobility MOTFTs, as discussed in copending U.S. patent application Ser.No. 13/902,514, one could achieve a MOTFT with mobility beyond 50cm²/Vsec. The MOTFT and backpanel design disclosed in this inventionenables such high mobility MOTFTs to be used for high speed, large pixelcontent displays such as 8000×4000 displays with 480 Hz frame rate. Thelow process temperatures in anodization avoid substrate vamping, anddimension change, and improves alignment accuracy between the gate metallayer and post gate insulator layers. In contrast, SiO2, SiON and SiNgate insulator layers have to be processed at temperature above 300° C.for the needed film quality.

A layer 18 of semiconductor metal oxide is deposited over the uppersurface of layer 16. Metal oxide layer 18 is transparent to theradiation wavelengths used in the self-alignment procedure. Some typicalexamples of transparent metal oxide semiconductor materials include ZnO,InO, SnO, GaO, AlSnO, GalnO, GaZnO, ZnInO, InAlZnO, InGaSnO, InAlSnO,InGaZnO, ZnSnO, GaSnO, InGaCuO, InCuO, AlSnO, AlCuO, etc. As explainedin the above described copending patent application (now, issued as U.S.Pat. No. 7,977,868), the metal oxide semiconductor may be amorphous orpolycrystalline, however, amorphous and/or nano-crystalline ispreferred. Layer 18 may be a blanket layer or it may optionally bepatterned, depending primarily on the final product.

A passivation layer transparent to the radiation wavelengths used in theself-alignment procedure is then deposited over layer 18. Preferably,the constraint on the passivation layer is that the passivation layershould have very little chemical interaction with the underlyingsemiconductor metal oxide layer 18. For examples and explanations ofthis feature see the U.S. Pat. No. 7,812,346 entitled “Metal Oxide TFTwith Improved Carrier Mobility”, and incorporated herein by reference.Examples of passivation material that can be processed by a coatingprocess (such as spin coating, slot coating, spray coating, etc.)include polymer PMGI, polystyrene (PS), Poly(methyl methacrylate)(PMMA),polyimide (PI), polyethylene (PE), poly-acrylics and spin on glass.Examples of passivation material that can be processed by vacuumdeposition (such as thermal evaporation, sputter, PECVD, MOCVD or ALD)include MgF₂, Ta₂O₅, TiO₂, ZrO₂, V₂O₅, W₂O₃, SiO₂, SiN, SiON, Al₂O₃,AlN, etc.

Once the passivation layer is deposited, a positive working photoresistlayer 30 is positioned thereon, for example by spin coating, slotcoating, spray coating, or the like. Photoresist layer 30 is thenexposed from the back (rear surface, below substrate 12 in FIG. 1,represented by arrows 32). Since all of the materials except the gatemetal are transparent to the exposing light, gate metal 14 will act as amask for the alignment of the passivation area 20. Thus, photoresistlayer 30 is exposed and developed to form a mask for the etching of thepassivation layer into passivation area 20 overlying gate metal 14. Asillustrated in FIG. 1, all exposed portions of photoresist layer 30 areremoved because the exposed portions of the positive photoresistdecompose or disassociate (change relative to the unexposed portion) toallow the exposed areas to be relatively easily removed in thedeveloping stage. The passivation material over the exposed areas can beetched away using the first photoresist as a mask, generally with alight etchant or other dissolving material, with no effect on the lowersurface.

Regardless which method or process for patterning passivation area 20 isused, the method should not destroy or adversely affect semiconductoractive layer 18. Some extra mask pattern may be needed or used topattern other parts of the product outside of TFT 10 and the criticalgate area. A description of such parts of the product outside of TFT 10is provided in a U.S. Pat. No. 7,605,029 entitled “Self-AlignedTransparent Metal Oxide TFT on Flexible Substrate”, and incorporatedherein by reference. The pattern in such non-critical areas can also beformed by one of several printing methods (such as imprinting, inkjetprinting, solution dispensing, laser printing, etc.) known to artisansin the printing field.

Some photo-patternable polymers can be used directly as thepassivation/etch-stop layer. In such a case, layers 20 and 30 in FIG. 1are simplified into single layers. Examples of such material includephotosensitive polyimides from Toray Industries, Inc. (DL-1000 seriesand SL-4100 series), DuPont (PI2555), and HD Microsystem (HD8820).Photo-patternable acrylics such as PMGI from Microchem can also be used.

It will be understood that substantially complete control is possiblefor the size of overlap d1 during the masking and etching stages withoutrequiring additional steps or materials. For example, referring to thefirst masking step illustrated in FIG. 1, by changing the exposure timeor intensity (e.g. increasing or decreasing either one) the amount ofremaining photoresist can be decreased or increased, thus altering thewidth of overlap d1. Also, the etchant used in conjunction with eitherof the patterns in FIGS. 1 and 3 can be increased to increase overlapd1. These features and how to adjust them are well known in theself-alignment field and are included in the term ‘self-align” or“self-alignment” when used to describe the process.

It can be seen that no critical masking step is performed in whichexpensive tools are required. Also, because of the substantiallycomplete control of the overlap or critical areas, any overlap can beprovided from substantially zero to any desired amount without thenecessity of sacrificing small channel lengths. Further, no expensivemasks or tools are required and larger areas can be exposed during theprocess so that expensive stepping and stitching or the like are notrequired.

Several stages or phases in another fabrication process of TFTs isillustrated in FIGS. 3 through 9 in accordance with the presentinvention. Turning specifically to FIG. 3, a transparent substrate 52 isillustrated, which may be any convenient material transparent toradiation (i.e. self-alignment exposure) wavelength used in theself-alignment procedure, such as glass, plastic, etc. Gate metal layer54 is patterned on/in the upper surface of substrate 52 by anyconvenient means. Since the position of gate metal layer 54 is notcritical virtually any non-critical patterning technique can be used. Itwill be understood by those of skill in the art that in addition to orinstead of forming gate metal layer 54 with a proximity or a projectiontool, the gate layer can be formed with any of the various printingprocesses mentioned above, including imprinting or off-set printingmethods. Also, gate metal 54 is an opaque conductive metal that will nottransmit the radiation wavelengths used in the self-alignment procedure.While a single gate metal 54 is illustrated for convenience inunderstanding, it will be understood that this might represent one ormore (even all) of the TFTs used in a backplane or other large areaapplications. The patterning of gate metal 54 is considered in thisprocedure as the first of three masking or alignment steps.

A thin layer 56 of gate dielectric material is formed over gate metal 54and the surrounding area. Again, layer 56 may be a blanket layercovering the entire TFT array, or by a surface reaction method orprocess self-aligned to the gate metal layer and covering the gate metalcompletely, no alignment is required. The gate dielectric material maybe any convenient material that provides the desired dielectric constantfor TFT operation and is transparent to the radiation wavelengths usedin the self-alignment procedure. A layer 58 of semiconductoramorphous/nano-crystalline metal oxide is deposited over the uppersurface of layer 56. Metal oxide layer 58 is transparent to theradiation wavelengths used in the self-alignment procedure. Some typicalexamples of transparent metal oxides include ZnO, InO, SnO, GaO, AlZnO,GalnO, GaZnO, ZnInO, InAlZnO, InGaZnO, ZnSnO, GaSnO, InGaCuO, InCuO,AlCuO, etc. As explained in the above described copending patentapplication, the metal oxide semiconductor may be amorphous orpolycrystalline, however, amorphous and/or nano-crystalline ispreferred. Layer 58 may be a blanket layer or it may optionally bepatterned, depending primarily on the final product. However, since thepatterning would be, at the most very large, and since it is optionalthis is not considered a masking step of the present process.

A layer 60 of etch stop material is deposited in a blanket layer overmetal oxide semiconductor layer 58. It will be understood from thefollowing description that layer 60, while referred to as an “etch stopmaterial”, actually has the dual function of an etch stop materialduring S/D and following processes and a passivation material (duringfinal device operation and the title is not intended to in any way limitthe scope of the invention. Generally, etch stop layer 60 is selected tobe etchable by a process that does not use or generate UV light, such asa standard wet etch process. Also, etch stop layer 60 can be thinner orthicker than gate dielectric layer 56 and the dielectric constant ismuch lower than the dielectric constant of the gate dielectric. As anexample, etch stop layer 60 is generally greater than twice as thick asgate dielectric layer 56 or at least 500 nm thick while dielectric layer56 is generally in a range of 100 nm to 200 nm thick. It will beunderstood that the etch stop material can be any material that fulfillsthese requirements. A layer 62 of photo-patternable material, preferablya positive photoresist material, is coated or deposited in a blanketlayer over etch stop layer 60. Photo resist layer 62 can be deposited,for example by spin coating, slot coating, spray coating, or the like.Generally, photoresist layer 62 is a standard material that is exposedby typical UV sources in a normal lithographic process and is notaffected by the wet etch process used to remove portions of etch stoplayer 60. In a second masking step, outer portions 64 of layer 62 areexposed and developed (removed) using a typical UV source (>350 nm) inconjunction with an isolation mask (not shown). It will be understoodthat layers 60 and 62 are specifically selected to be individually orselectively removable. For a better understanding in this process theterm “non-UV etch” is any etch process that does not have or include anyUV generation source.

Turning specifically to FIG. 4, with portions 64 of layer 62 removed,outer uncovered portions of etch stop layer 60 can be removed using anon-UV etch, generally a wet etch. Referring additionally to FIG. 5A, inthe preferred process photoresist layer 62 is then exposed from the back(rear surface, below substrate 52 in FIG. 5A). Since all of thematerials except gate metal 54 are transparent to the exposing light,gate metal 54 will act as a mask for the ultimate alignment of etch stoplayer 60. Thus, photoresist layer 62 is exposed and developed to form amask for the subsequent etching of etch stop layer 60. Referringadditionally to FIG. 6, etch stop layer 60 is used as a mask to etchmetal oxide semiconductor layer 58 to isolate or define the limits ofthe TFT active layer. Because photoresist layer 62 has already beenexposed and developed, it is not necessary to limit the etch processused for etching semiconductor layer 58 to a non-UV etch at this pointand a simple dry etch or any other convenient etch can be used.

It will be understood that the step of exposing photoresist layer 62from the rear surface and developing or removing the material and thestep of etching metal oxide semiconductor layer 58 can be performed inany convenient order and neither of the steps is considered a maskingstep of the present process. For example and referring to FIG. 5B, itcan be seen that metal oxide semiconductor layer 58 can be etched priorto exposing and developing photoresist layer 62. However, when usingthese process steps a non-UV etch process must be used in etching metaloxide semiconductor layer 58 so as not to affect photoresist layer 62.Photoresist layer 62 is then exposed from the back (rear surface, belowsubstrate 52 in FIG. 5B) to arrive at the structure illustrated in FIG.6.

Referring specifically to FIG. 7, etch stop layer 60 is etched usingsome convenient etch and using the remaining portion of photoresistlayer 62 as a mask. Since the remaining portion of photoresist layer 62is accurately aligned with gate metal 54 by the rear exposure processand is not affected by substrate deformation, the remaining portion ofetch stop layer 60 will be accurately aligned with gate metal 54.

Referring additionally to FIG. 8, the remaining portion of photoresistlayer 62 is simply and easily stripped to leave the portion of etch stoplayer 60 overlying the active layer 58 of metal oxide semiconductormaterial. As illustrated in FIG. 9, a layer 64 of source/drain metal isdeposited and patterned using the remaining portion of etch stop layer60 to define a channel in layer 58 of metal oxide semiconductormaterial. The patterning of metal layer 64 into spaced apart source anddrain contacts 66 is the third and final masking step of the presentprocess.

In a preferred embodiment, source/drain metal layer 60 consists of twolayers. A top layer can be any metal that can provide good conductivity,such as Al, and can be selectively etched over a bottom layer. Thebottom layer is a metal that can be patterned without etching the metaloxide of layer 58, such as Mo, Ti, Ta, W etc. or a metal alloy includingany such metal. In the preferred process the top layer is etched firstand the chemistry is changed to etch the bottom layer. Source/drainmetal 66 is defined in the traditional way by allowing a large overlapwith gate 54 but the overlap capacitance is greatly reduced by thethickness and low dielectric constant of etch stop layer 60.

In a variation of the processes described in FIG. 3-9, etch stop layer60 can be printed with an isolation mask pattern (much larger than theetch stop pattern and therefore feasible). The result is basically theetch stop formation illustrated in FIG. 5A, without the overlying layer62 of photoresist. The printed etch stop layer 60 is used as a mask toetch metal oxide layer 58 for isolation. After metal oxide layer 58 isetched, a layer of regular positive photoresist is blanket coated andexposed from the backside of substrate 52 without masking. The coatingcan be accomplished using any one of a variety of methods including forexample by spin coating, dip coating, inkjet printing, screen printing,Gravure printing, and the like. The developed photoresist (generally asillustrated in FIGS. 6 and 7) is used as a mask to pattern etch stoplayer 60. The photoresist is removed and source/drain metal depositedand patterned as described above.

FIG. 10-12 illustrate several pixel circuit designs and correspondingprocesses for low-parasitic capacitance, self-aligned MOTFTs to be usedfor display pixels with large aperture ratio. Each FIG. 10-12illustrates a different embodiment of a MOTFT in accordance with thepresent invention and the step-by-step process of fabrication in topplan views (a) through (e) and (a) through (g), respectively. It shouldbe understood that the various layers described are the same as layerspreviously described above and will appear the same in side views (notshown here for simplicity of understanding).

FIG. 10( a) shows the gate line pattern in a display pixel area. Thegate metal layer is first deposited onto a transparent supportingsubstrate (depicted by the paper surface), and then patterned with astandard photolithograph process. Two holes are left in areascorresponding to via-holes in the etch stop layer (see descriptionbelow) and for forming S/D contact electrodes. A gate dielectric layeris than formed by means of a deposition method, a coating method or asurface chemical reaction method discussed previously. Again, it ispointed out specifically that surface reaction methods or processes suchas anodization provide a self-aligned gate dielectric material on topand side walls of the gate metal layer. A metal oxide channel layer isthen blanket deposited on the gate insulator layer by means of adeposition or a coating method, described previously. The channel layercan be in either single layer form, or in multiple layer form with thecomposition variation in a vertical direction. Examples of bilayerMOTFTs with high mobility and high operation stability under current andunder back-light illumination were disclosed in a co-pending US patentapplication entitled “STABLE HIGH MOBILITY MOTFT AND FABRICATION AT LOWTEMPERATURE”, bearing Ser. No. 13/502,914, filed on May 24, 2013, andincorporated herein by reference.

The transparent metal-oxide channel layer is than patterned in the formshowing in FIG. 10( b) with a standard lithograph patterning method. Itwill be understood that the location accuracy for the metal-oxide layeris less critical than other layers, as long as the edge covers most ofthe two holes on the gate layer and the area in between. The etch-stoplayer is then blanket deposited onto the patterned channel layer. Apositive photoresist is then coated onto the etch-stop layer andpatterned by means of the built-in mask as formed by the opaque gatemetal layer by exposing UV light from the other side of the transparentsubstrate (as shown in FIG. 10(C)). With this process, a patternedetch-stop layer is formed overlaying the gate line with via-holes openedfor source/drain contacts. The source drain metal layer, includingsource/drain contacts and data lines, is then formed by means of ablanket deposition and patterned into the shape shown in FIG. 10( d).For applications requiring a high conductance data line, Mo/M/Mo,Ti/M/Ti, W/M/W (in which M=Al or Cu, W=tungsten) can be used. The pixelelectrode can then be formed with shape and location shown in FIG. 10(e). Although only a single pixel is illustrated in FIG. 10( e), theentire backpanel can be envisioned by tiling the pixel in vertical andhorizontal directions. The entire TFT array can be form with just a 4mask process and can be used for driving TN type or VA type LCD.

A similar process can also be used for the fabrication of a pixel driverarray for AMOLED, with one more mask for via-hole forming on the gateinsulator layer. The same flow used for fabricating AMOLED can also beused for fabricating gate and data drivers in peripheral areas outsidethe display array. In addition, image sensor arrays with active sensingpixels with local gain (typically three TFTs and one capacitor orbeyond) can also be made with the same flow. For in-plane switching(IPS) type of AMLCD, two more mask steps are needed after forming thetransparent pixel electrode in FIG. 10( e): (1) depositing an interlayeron top of the pixel electrode and forming via holes at contact pad areasout of the display area, and (2) forming a transparent common electrodeon top of the interlayer with electrode patterns formed following arequirement for the specific liquid crystal cell arrangement. An exampleof a 6 mask structure and process for IPS-LCD is disclosed in acopending U.S. patent application entitled “Mask level reduction inMOTFT”, bearing Ser. No. 13/481,781, filed on May 26, 2012. More detailson the interlayer forming and the top and bottom electrodes formingprocess are provided in that application.

In certain portable applications with high pixel density (small pixelpitch), and high aperture ratio, one would like to form a planarizationlayer between the S/D formation (FIG. 10( d)) and the bottom electrodeformation (FIG. 10( e)). One more mask is needed to open a via hole ontop of the drain metal electrode. The pixel electrode can then beextended to that hole, filling the entire transparent area definedwithin the gate and data lines.

FIG. 11 illustrates another embodiment, with a finger pattern in thearea corresponding to the drain contact (as shown in FIG. 11( a)). Thegate insulator and the metal-oxide channel layer are then formed on topof the patterned gate metal. The metal oxide channel layer is thenpatterned into the shape shown in FIG. 11( b). The etch-stop layer isthen blanket coated on top of the channel and patterned into the shapeof the gate layer by means of a self-aligned process with the gate metalserving as the built-in mask (as shown in FIG. 11( c)). The source/drainlayer and the data line are then formed on the etch-stop layer with astandard lithography process. In this case, an S/D bilayer is used witha thin transparent conducting oxide (or a thin, semitransparent Molayer) and a thick Al or Cu layer. When a half-tone photolithograph isused, the photoresist over the drain electrode area can be removed andthe opaque Al (or Cu) layer can be removed (as shown in FIG. 11( e)). Ablanket planarization layer is then coated over and a via hole is openedup on top of the drain area (as shown in FIG. 11 e). The transparentpixel electrode can then be deposited and patterned with the 2^(nd)self-aligned process within the area defined by the opaque gate and datemetal lines. A MOTFT pixel driver array is then formed with a highaperture ratio using only 4 mask steps.

In certain LCD applications, it may be convenient to form a hole atlocations for the liquid crystal spacer post from the color filter sideof the substrate, such location anchors can be formed at designatedareas in the pixel, as shown in FIG. 12. FIG. 12( a) shows a hole at thelocation for the LCD spacer post. A via hole is formed in the etch-stoplayer (as shown in FIG. 11( c)) and used as the spacer anchor in thefinal MOTFT backpanel (as shown in FIG. 12( g)) The rest of the processsteps are similar to that shown in FIG. 12 below.

It should be noted that other components in a flat panel circuit canalso be made concurrently during the TFT process, including capacitorsand contact pads for connecting wafer based drivers in peripheral areassurrounding the display area. The self-aligned etch-stop over the gatepattern guarantees TFT performance uniformity over the entire substratearea. With the TFT structure and process described in FIGS. 10-12, highuniformity TFT backpanel circuits over large active areas can thus bemade with phototools having low alignment accuracy.

The other components are easily included in the process with no need foradditional masks or other steps. Thus, the process disclosed in thisinvention can be conveniently used to make entire backpanels fordisplays or other applications (such as image sensor arrays, chemicaland/or bio-sensor arrays) with a substantial reduction in process stepsand labor.

Thus, mask reduced processes are described for fabricating MOTFTs anddisplay backpanels comprising such MOTFTs with substantially reducedelectrode overlap and with reduced masking steps over the prior art.Also, the etch stop layer can be formed thicker than the gate dielectriclayer and with a much lower dielectric constant. Thus, in addition tothe substantially reduced overlap, the dielectric in the overlap has asubstantially increased thickness and lower dielectric constant so thatthe capacitance is substantially reduced. Therefore, a reduction in thenumber of masks (i.e. from four masks to three masks), while stillachieving the self-alignment between the gate and the source/drain,results in a major reduction in the overall cost. Such designs alsoenable high pixel density applications with low power consumption (dueto both improved aperture ratio and reduced power loss associating withcoupling capacitances. It should further be noted that other componentsin a flat panel circuit can also be made concurrently during the TFTprocess, including capacitors and contact pads for connecting waferbased drivers in peripheral areas surrounding the display area. Theprocess disclosed in this invention can thus be used to make entirebackpanels for displays or other applications.

Various changes and modifications to the embodiments herein chosen forpurposes of illustration will readily occur to those skilled in the art.To the extent that such modifications and variations do not depart fromthe spirit of the invention, they are intended to be included within thescope thereof which is assessed only by a fair interpretation of thefollowing claims.

Having fully described the invention in such clear and concise terms asto enable those skilled in the art to understand and practice the same,the invention claimed is:
 1. A method of fabricating an active matrixbackpanel with metal oxide TFT array on transparent substratescomprising at least the steps of: providing a transparent substratehaving a front surface and a rear surface; depositing a blanket opaquegate metal on the front surface of the substrate and patterning themetal layer to form gate/selection lines with patterns defining the gatearea of each TFT; depositing a layer of transparent gate dielectricmaterial on the front surface of the substrate overlying the gate metaland a surrounding area and a layer of transparent metal oxidesemiconductor material on the surface of the layer of transparent gatedielectric; patterning the transparent metal-oxide semiconductor layerto areas corresponding to an entire TFT channel and at least portions ofsource/drain contacts; depositing a layer of etch stop material on thepatterned layer of metal oxide semiconductor material; coating a layerof positive-tone photoresist material on the layer of etch stopmaterial; exposing the photoresist material from the rear surface of thesubstrate using the opaque gate metal on the front surface of thesubstrate as a built-in mask and removing exposed portions of thephotoresist material so as to leave the layer of etch stop materialexposed except for a portion overlying and aligned with the gate metal;using the portion of the photoresist material directly overlying andaligned with the gate metal layer, selectively etching exposed portionsof the etch stop layer leaving a portion of the etch stop layeroverlying and aligned with the gate metal, the portion of the etch stoplayer defining a channel area in the layer of metal oxide semiconductormaterial with via-holes in source/drain contact areas, depositing aconductive layer and patterning it to form data lines of the TFT arraycrossing-over the gate/selection lines and the source and drain contactelectrodes on opposed sides of the channel area and in the via-holes inthe etch-stop layer; depositing a conductive layer and patterning theconductive layer to form a pixel electrode within each pixel of theactive matrix backpanel.
 2. A method as claimed in claim 1 wherein thestep of depositing a layer of transparent gate dielectric material isperformed by vacuum deposition, thermal deposition, sputter, PECVD,MOCVD, ALD, or by coating or printing from a solution
 3. A method asclaimed in claim 1 wherein the step of forming the gate dielectric layerincludes a self-aligned surface reaction process forming portions of thegate dielectric layer over top and side walls of the gate area of eachTFT.
 4. A method as claimed in 3 wherein the self-aligned surfacereaction process includes one of thermal oxidation, plasma oxidation,anodization or combinations thereof.
 5. A method as claimed in claim 1wherein the step of depositing a layer of photo-patternable etch stopmaterial includes depositing a material selected to be etch-able by astandard wet etch process not including the use of UV.
 6. A method asclaimed in claim 1 wherein the step of depositing and patterningconductive material for data lines and source drain electrodes includesdepositing a top layer and a bottom layer, the top layer including metalproviding good conductivity and that can be selectively etched over thebottom layer, the bottom layer including metal that can be patternedwithout etching the underlying layer of metal oxide.
 7. A method asclaimed in claim 1 wherein the step of depositing the layer oftransparent metal oxide semiconductor material includes depositing oneof ZnO, InO, SnO, GaO, AlZnO, GalnO, GaZnO, ZnInO, InAlZnO, InGaSnO,InAlSnO, InGaZnO, ZnSnO, GaSnO, InGaCuO, InCuO, AlSnO, and AlCuO inuniform composition single layer, or combinations thereof in blend formor multiple stack form.
 8. A method as claimed in claim 1 wherein thestep of depositing the layer of photo-patternable etch stop materialincludes depositing a material with a lower dielectric constant than adielectric constant of the transparent gate dielectric material.
 9. Amethod of fabricating an active matrix backpanel with a metal oxideTFT/pixel array on transparent substrates comprising at least the stepsof: providing a transparent substrate having a front surface and a rearsurface; depositing a blanket opaque gate metal layer on the frontsurface of the substrate and patterning the gate metal layer to formgate/selection lines with patterns defining the gate area of each TFT ofthe TFT/pixel array; depositing a layer of transparent gate dielectricmaterial on the front surface of the substrate overlying the gate metallayer and a surrounding area and a layer of transparent metal-oxidesemiconductor material on the surface of the layer of transparent gatedielectric material; patterning the layer of transparent metal-oxidesemiconductor material into areas corresponding to an entire TFT channeland at least portions of source/drain contact areas; depositing a layerof photo-patternable etch stop material on the layer of metal-oxidesemiconductor material; exposing the layer of photo-patternable etchstop material from the rear surface of the substrate using the opaquegate metal on the front surface of the substrate as a built-in mask andremoving exposed portions to form the etch stop layer into a portionoverlying and aligned with the gate metal pattern, the overlying andaligned portion of the etch stop layer defining a channel area in thelayer of metal oxide semiconductor material with via-holes in thesource/drain contact areas; depositing and patterning a conductive layerto form data lines of the TFT array crossing-over the gate/selectionlines and source and drain contact electrodes on opposed sides of thechannel area in the via-holes in the etch-stop layer; and depositing andpatterning a conductive layer to form pixel electrodes within each pixelTFT/pixel array of the active matrix backpanel.
 10. A method as claimedin claim 9 wherein the step of depositing a layer of transparent gatedielectric material is performed by vacuum deposition, thermaldeposition, sputter, PECVD, MOCVD, ALD, or by coating or printing from asolution
 11. A method as claimed in claim 9 wherein the step of formingthe gate dielectric layer includes a self-aligned surface reactionprocess forming portions of the gate dielectric layer over top and sidewalls of the patterned gate metal layer.
 12. A method as claimed in 11wherein the self-aligned surface reaction process includes one ofthermal oxidation, plasma oxidation, anodization or combinationsthereof.
 13. A method as claimed in claim 9 wherein the step ofdepositing a layer of photo-patternable etch stop material includesdepositing a material selected to be etch-able by a standard wet etchprocess not including the use of UV.
 14. A method as claimed in claim 9wherein the step of depositing and patterning conductive material fordata lines and source drain electrodes includes depositing a top layerand a bottom layer, the top layer including metal providing goodconductivity and that can be selectively etched over the bottom layer,the bottom layer including metal that can be patterned without etchingthe underlying layer of metal oxide.
 15. A method as claimed in claim 9wherein the step of depositing the layer of transparent metal oxidesemiconductor material includes depositing one of ZnO, InO, SnO, GaO,AlZnO, GalnO, GaZnO, ZnInO, InAlZnO, InGaSnO, InAlSnO, InGaZnO, ZnSnO,GaSnO, InGaCuO, InCuO, AlSnO, and AlCuO in uniform composition singlelayer, or combinations thereof in blend form or multiple stack form. 16.A method as claimed in claim 9 wherein the step of depositing the layerof photo-patternable etch stop material includes depositing one of PMGI,polystyrene (PS), poly(methyl methacrylate)(PMMA), polyimide (PI),polyethylene (PE), spin on glass, poly-acrylics, MgF₂, Ta₂O₅, TiO₂,ZrO₂, V₂O₅, W₂O₃, SiO₂, SiN, SiON, Al₂O₃, AlN in uniform compositionsingle layer, or combinations thereof in blend form or multiple stackform.
 17. A method as claimed in claim 9 wherein the step of depositingthe layer of photo-patternable etch stop material includes depositing alayer thicker than a thickness of the layer of transparent gatedielectric material.
 18. A method as claimed in claim 17 wherein thestep of depositing the layer of photo-patternable etch stop materialthicker than the thickness of the layer of transparent gate dielectricmaterial includes depositing a layer of etch stop material greater thantwice as thick as the thickness of the gate dielectric material.
 19. Amethod as claimed in claim 17 wherein the step of depositing the layerof photo-patternable etch stop material thicker than the thickness ofthe layer of transparent gate dielectric material includes depositing alayer of etch stop material with a thickness greater than 500 nm.
 20. Amethod as claimed in claim 9 wherein the step of depositing the layer ofphoto-patternable etch stop material includes depositing a material witha lower dielectric constant than a dielectric constant of thetransparent gate dielectric material.
 21. A method as claimed in claim 9wherein the step of patterning the layer of transparent metal-oxidesemiconductor material into areas includes using one of spin coating,slot coating, dip coating, inkjet printing, screen printing, and Gravureprinting to apply the photoresist material.
 22. A method as claimed inclaim 9 wherein each pixel in the metal oxide TFT/pixel array includespixel electrodes and the pixel electrodes are self-align patterned withthe built in mask formed by opaque data and gate/selection metal lines.23. A method as claimed in claim 9 wherein the process of fabricating anactive matrix backpanel with a metal oxide TFT/pixel array includesfabricating an array for AMLCD wherein spacer anchor structures areself-align patterned in the step of exposing the layer ofphoto-patternable etch stop material or the step of depositing a layerof transparent gate dielectric material with built-in mask patterns inthe gate metal layer.
 24. A method of fabricating a metal oxide TFT on atransparent substrate using three masks and comprising the steps of:providing a transparent substrate having a front surface and a rearsurface; patterning opaque gate metal with a first mask on the frontsurface of the substrate defining a gate area for a TFT; depositing alayer of transparent gate dielectric material on the front surface ofthe substrate overlying the gate area and a surrounding area; depositinga layer of transparent metal oxide semiconductor material on the surfaceof the layer of transparent gate dielectric; depositing a layer of etchstop material on the layer of metal oxide semiconductor material;patterning with a second mask, positive photoresist material on thelayer of etch stop material to define an isolation area in the layer oftransparent metal oxide semiconductor material, the etch stop materialand the photoresist material being selectively removable; removinguncovered portions of the layer of etch stop material, remainingportions of the layer of etch stop material forming a metal oxidesemiconductor material etch mask; exposing the photoresist material fromthe rear surface of the substrate using the opaque gate metal on thefront surface of the substrate as a mask and removing exposed portionsof the photoresist material so as to leave the layer of etch stopmaterial uncovered except for a portion overlying and aligned with thegate metal; using the metal oxide semiconductor material etch mask,etching uncovered portions of the metal oxide semiconductor material soas to isolate the TFT; using the portion of the photoresist materialdirectly overlying and aligned with the gate metal, selectively etchinguncovered portions of the etch stop layer leaving a portion of the etchstop layer overlying and aligned with the gate metal, the portion of theetch stop layer defining a channel area in the layer of metal oxidesemiconductor material; and depositing and patterning with a third maskconductive material on the portion of the etch stop layer overlying andaligned with the gate metal and on the layer of metal oxidesemiconductor material to form source and drain areas on opposed sidesof the channel area.
 25. A method as claimed in claim 24 wherein thestep of depositing a layer of transparent gate dielectric material isperformed by vacuum deposition, thermal deposition, sputter, PECVD,MOCVD, ALD, or by coating or printing from a solution.
 26. A method asclaimed in claim 24 wherein the step of depositing the layer oftransparent gate dielectric material includes a self-aligned surfacereaction process forming the layer of transparent gate dielectricmaterial over top and side walls of the gate area.
 27. A method asclaimed in 26 where in the self-aligned surface reaction processincludes one of thermal oxidation, plasma oxidation, anodization orcombinations thereof.
 28. A method as claimed in claim 24 wherein thestep of depositing the layer of etch stop material includes depositing alayer thicker than a thickness of the layer of transparent gatedielectric material.
 29. A method as claimed in claim 28 wherein thestep of depositing the layer of etch stop material thicker than thethickness of the layer of transparent gate dielectric material includesdepositing a layer of etch stop material greater than twice as thick asthe thickness of the gate dielectric material.
 30. A method as claimedin claim 28 wherein the step of depositing the layer of etch stopmaterial thicker than the thickness of the layer of transparent gatedielectric material includes depositing a layer of etch stop materialwith a thickness greater than 500 nm.
 31. A method as claimed in claim24 wherein the step of depositing the layer of etch stop materialincludes depositing a material with a lower dielectric constant than adielectric constant of the transparent gate dielectric material.
 32. Amethod as claimed in claim 24 wherein the step of depositing andpatterning conductive material includes depositing a top layer and abottom layer, the top layer includes metal that provides goodconductivity and can be selectively etched over the bottom layer, andthe bottom layer includes metal that can be patterned without etchingthe underlying layer of metal oxide.
 33. A method as claimed in claim 24wherein the step of patterning with the second mask, positivephotoresist material includes forming a blanket layer of positive photoresist material and using the second mask, exposing and removingportions of the blanket layer to define the isolation area in the layerof transparent metal oxide semiconductor material.
 34. A method asclaimed in claim 24 wherein the step of patterning with the second mask,positive photoresist material includes using one of spin coating, dipcoating, inkjet printing, screen printing, and Gravure printing to applythe photoresist material.
 35. An active matrix backpanel including anarray of metal oxide TFTs with reduced inter-electrode capacitance, eachTFT of the array of TFTs comprising: a transparent substrate having afront surface and a rear surface; an opaque gate metal positioned on thefront surface of the substrate and defining a gate area for the TFT andgate selection bus-lines of the active matrix; a layer of transparentgate dielectric material positioned on the front surface of thesubstrate overlying the gate metal and a surrounding area; a layer oftransparent metal oxide semiconductor material positioned on the surfaceof the layer of transparent gate dielectric; a layer of etch stopmaterial positioned on the layer of metal oxide semiconductor materialoverlying and aligned with the gate metal, the layer of the etch stopmaterial defining a channel area in the layer of metal oxidesemiconductor material; and conductive material patterned to form datalines of the active matrix crossing over the gate/selection lines andsource/drain electrodes on opposed sides of the channel area of eachTFT, wherein the source/drain contacts are aligned on a portion of theetch stop layer overlying and aligned with the gate metal and on thelayer of metal oxide semiconductor material.
 36. The active matrixbackpanel as claimed in claim 35 further including a transparent pixelelectrode patterned within a transparent zone defined by the data linesand gate/selection lines in each TFT of the array of TFTs.
 37. Theactive matrix backpanel as claimed in claim 35 wherein the transparentsubstrate is a glass or a plastic sheet, or combination thereof in stackform.
 38. The active matrix backpanel as claimed in claim 35 wherein thetransparent gate dielectric layer comprises SiN, SiO₂, SiON, Al₂O₃,ZrO₂, Ta₂O₅, T₁O₂ in single layer or in multiple stack form.
 39. Theactive matrix backpanel as claimed in claim 35 wherein the gatedielectric layer is a self-aligned surface chemical reaction materialoverlying top and side walls of the gate metal layer.
 40. The activematrix backpanel as claimed in claim 35 wherein the gate dielectriclayer includes a thermal oxidation material, plasma oxidation material,anodization material and their combinations.
 41. The active matrixbackpanel as claimed in claim wherein the layer of transparent metaloxide semiconductor material includes ZnO, InO, SnO, GaO, AlZnO, GalnO,GaZnO, ZnInO, InAlZnO, InGaSnO, InAlSnO, InGaZnO, ZnSnO, GaSnO, InGaCuO,InCuO, AlSnO, and AlCuO in single layer with uniform composization or inblend or multiple stack form.
 42. The active matrix backpanel as claimedin claim 35 wherein the layer of etch stop material comprises atransparent inorganic dielectric layer, or a transparent organicdielectric layer, or combinations thereof in multiple stack or in blendform.
 43. The active matrix backpanel as claimed in claim 42 wherein thetransparent etch-stop layer comprises PMGI, polystyrene (PS),Poly(methyl methacrylate) (PMMA), polyimide (PI), polyethylene (PE),spin on glass, poly-acrylics, MgF₂, Ta₂O₅, TiO₂, ZrO₂, V₂O₅, W₂O₃, SiO₂,SiN, SiON, Al₂O₃, AlN in single or multiple-stack form
 44. The activematrix backpanel as claimed in claim 35 wherein the layer of etch stopmaterial includes a layer with a thickness greater than the thickness ofthe layer of transparent gate dielectric material.
 45. An active matrixbackpanel as claimed in claim 35 wherein the layer of etch stop materialhas a thickness greater than twice as thick as the thickness of the gatedielectric material.
 46. An active matrix backpanel as claimed in claim35 wherein the layer of etch stop material has a thickness of at least500 nm.
 47. An active matrix backpanel as claimed in claim 35 whereinthe layer of etch stop material includes a material with a lowerdielectric constant than a dielectric constant of the transparent gatedielectric material.
 48. The active matrix backpanel of claim 35incorporated in a thin film electronic device.
 49. The active matrixbackpanel as claimed in claim 48 wherein thin film electronic device isan active matrix display, an active matrix image array, a chemicalsensor array or a bio-sensor array.